ETOTH-Amp_LM386 *SPICE Netlist generated by Advanced Sim server on 25.11.2025 22:45:08 .options MixedSimGenerated *Schematic Netlist: CCblock NetCblock_1 OUT 220uF CCblock1 NetCblock1_1 NetCblock1_2 10nF XIC1A NetIC1_1 0 NetCblock1_2 0 NetCblock_1 VAP NetIC1_7 NetIC1_8 lm386 XIC1B NetIC1_1 0 NetCblock1_2 0 NetCblock_1 VAP NetIC1_7 NetIC1_8 lm386 LL_Speaker 0 NetL_Speaker_2 0.1mH RR_POTA 0 NetR_POT_2 {10k * {POS}} RR_POTB NetR_POT_2 IN {10k - (10k * {POS})} RR_Speaker NetL_Speaker_2 OUT 8R RR_static1 NetCblock1_1 NetR_POT_2 100k RR_static2 0 NetCblock1_1 10k VU_q VAP 0 10V VUin IN 0 DC 0 SIN(5 2 220 0 0 0) AC 1 0 .PLOT TRAN {v(IN)} =PLOT(1) =AXIS(1) =NAME(U_IN) =UNITS(V) =RGB(0, 0, 255) .PLOT TRAN {v(OUT)} =PLOT(2) =AXIS(1) =NAME(U_OUT) =UNITS(V) =RGB(255, 153, 0) .OPTIONS METHOD=GEAR MAXORD=2 *Selected Circuit Analyses: .TRAN 90.91u 22.73m 0 90.91u *Global Parameters: .PARAM POS={1} *Models and Subcircuits: *LM386 Audio power amplifier * /* * 1. The following model behavior shows good agreement with the * LM386 data sheet values: * * a) Quiescent power supply current; * b) High frequency response at low gain setting; * c) Power-supply rejection ratio, both bypassed and unbypassed; * d) Voltage gain, both with pins 1&8 shorted and open; and * e) Total harmonic distortion. * * 2. The model has the following discrepancies: * * f) High-gain frequency response looks somewhat more wideband * than the actual device; * g) Peak-to-peak output voltage swing is a bit more than the * data sheet value- in other words, the model drives * closer to the rails; and * h) Input bias current in this model is only about 7 nA, * compared with the 250 nA "typical" value mentioned in * the data sheet. * * 3. The frequency response characteristics of this LM386 model * can be adjusted somewhat by changing C1, the rolloff capacitor in * the voltage gain stage. It could also be made more realistic by * tweaking transistor model parameters Cjc, Cje, Tr and Tf, * although this can get pretty hairy. * * 4. Likewise, output drive capability could be made more * realistic by tweaking transistor model parameters; again, this is * hairy. */ * .subckt lm386 g1 inn inp gnd out vs byp g8 * | | | | | | | | * IC pins: 1 2 3 4 5 6 7 8 * input emitter-follower buffers: q1 gnd inn 10011 ddpnp r1 inn gnd 50k q2 gnd inp 10012 ddpnp r2 inp gnd 50k * differential input stage, gain-setting * resistors, and internal feedback resistor: q3 10013 10011 10008 ddpnp q4 10014 10012 g1 ddpnp r3 vs byp 15k r4 byp 10008 15k r5 10008 g8 150 r6 g8 g1 1.35k r7 g1 out 15k * input stage current mirror: q5 10013 10013 gnd ddnpn q6 10014 10013 gnd ddnpn * voltage gain stage & rolloff cap: q7 10017 10014 gnd ddnpn c1 10014 10017 15pf * current mirror source for gain stage: i1 10002 vs dc 5m q8 10004 10002 vs ddpnp q9 10002 10002 vs ddpnp * Sziklai-connected push-pull output stage: q10 10018 10017 out ddpnp q11 10004 10004 10009 ddnpn 100 q12 10009 10009 10017 ddnpn 100 q13 vs 10004 out ddnpn 100 q14 out 10018 gnd ddnpn 100 * generic transistor models generated * with MicroSim's PARTs utility, using * default parameters except Bf: .model ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=100 + Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100 + Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333 + Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n + Tf=1n Itf=1 Xtf=0 Vtf=10) .model ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 + Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100 + Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333 + Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n + Tf=1n Itf=1 Xtf=0 Vtf=10) .ends LM386 .END