mirror of
https://github.com/erik-toth/audio-synth.git
synced 2025-12-06 19:20:02 +00:00
139 lines
4.3 KiB
Plaintext
139 lines
4.3 KiB
Plaintext
ETOTH-Amp_LM386
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*SPICE Netlist generated by Advanced Sim server on 03.12.2025 21:51:07
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.options MixedSimGenerated
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*Schematic Netlist:
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CC_DCBLOCK_IN NetC_DCBLOCK_IN_1 IN_FILT 10uF
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CC_DCBLOCK_OUT NetC_DCBLOCK_OUT_1 OUT 220uF
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XIC1A NetIC1_1 0 NetIC1_3 0 NetC_DCBLOCK_OUT_1 VAP NetIC1_7 NetIC1_8 lm386
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XIC1B NetIC1_1 0 NetIC1_3 0 NetC_DCBLOCK_OUT_1 VAP NetIC1_7 NetIC1_8 lm386
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LL_Speaker 0 NetL_Speaker_2 0.1mH
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RR_G NetR_G_1 NetR_G_2 100k
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RR_POTA 0 NetR_POT_2 {10k * {POS}}
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RR_POTB NetR_POT_2 IN_FILT {10k - (10k * {POS})}
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RR_Speaker NetL_Speaker_2 OUT 4R
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RR_static1 NetIC1_3 NetR_POT_2 100k
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RR_static2 0 NetIC1_3 10k
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XT1 NetR_G_2 IN NetC_DCBLOCK_IN_1 BUZ-81
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VU_KBactive NetR_G_1 0 DC 0 PULSE(3.3 0 0 4u 1u 4.5m*4 4.5m*8) AC 1 0
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VU_q VAP 0 10V
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VUin IN 0 DC 0 SIN(5 2 220 0 0 0) AC 1 0
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.PLOT TRAN {v(IN)} =PLOT(1) =AXIS(1) =NAME(U_IN) =UNITS(V) =RGB(0, 0, 255)
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.PLOT TRAN {v(OUT)} =PLOT(2) =AXIS(1) =NAME(U_OUT) =UNITS(V) =RGB(255, 153, 0)
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.PLOT TRAN {v(U_KBactive)} =PLOT(2) =AXIS(1) =NAME(U_KBactive) =UNITS(V)
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.OPTIONS METHOD=GEAR MAXORD=2
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*Selected Circuit Analyses:
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.TRAN 90.91u 180.0m 0 90.91u
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*Global Parameters:
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.PARAM POS={1}
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*Models and Subcircuits:
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*LM386 Audio power amplifier
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* /*
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* 1. The following model behavior shows good agreement with the
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* LM386 data sheet values:
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*
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* a) Quiescent power supply current;
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* b) High frequency response at low gain setting;
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* c) Power-supply rejection ratio, both bypassed and unbypassed;
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* d) Voltage gain, both with pins 1&8 shorted and open; and
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* e) Total harmonic distortion.
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*
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* 2. The model has the following discrepancies:
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*
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* f) High-gain frequency response looks somewhat more wideband
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* than the actual device;
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* g) Peak-to-peak output voltage swing is a bit more than the
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* data sheet value- in other words, the model drives
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* closer to the rails; and
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* h) Input bias current in this model is only about 7 nA,
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* compared with the 250 nA "typical" value mentioned in
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* the data sheet.
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*
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* 3. The frequency response characteristics of this LM386 model
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* can be adjusted somewhat by changing C1, the rolloff capacitor in
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* the voltage gain stage. It could also be made more realistic by
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* tweaking transistor model parameters Cjc, Cje, Tr and Tf,
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* although this can get pretty hairy.
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*
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* 4. Likewise, output drive capability could be made more
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* realistic by tweaking transistor model parameters; again, this is
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* hairy.
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*/
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*
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.subckt lm386 g1 inn inp gnd out vs byp g8
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* | | | | | | | |
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* IC pins: 1 2 3 4 5 6 7 8
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* input emitter-follower buffers:
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q1 gnd inn 10011 ddpnp
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r1 inn gnd 50k
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q2 gnd inp 10012 ddpnp
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r2 inp gnd 50k
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* differential input stage, gain-setting
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* resistors, and internal feedback resistor:
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q3 10013 10011 10008 ddpnp
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q4 10014 10012 g1 ddpnp
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r3 vs byp 15k
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r4 byp 10008 15k
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r5 10008 g8 150
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r6 g8 g1 1.35k
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r7 g1 out 15k
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* input stage current mirror:
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q5 10013 10013 gnd ddnpn
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q6 10014 10013 gnd ddnpn
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* voltage gain stage & rolloff cap:
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q7 10017 10014 gnd ddnpn
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c1 10014 10017 15pf
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* current mirror source for gain stage:
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i1 10002 vs dc 5m
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q8 10004 10002 vs ddpnp
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q9 10002 10002 vs ddpnp
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* Sziklai-connected push-pull output stage:
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q10 10018 10017 out ddpnp
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q11 10004 10004 10009 ddnpn 100
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q12 10009 10009 10017 ddnpn 100
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q13 vs 10004 out ddnpn 100
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q14 out 10018 gnd ddnpn 100
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* generic transistor models generated
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* with MicroSim's PARTs utility, using
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* default parameters except Bf:
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.model ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=100
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+ Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
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+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333
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+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
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+ Tf=1n Itf=1 Xtf=0 Vtf=10)
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.model ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=100
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+ Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100
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+ Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333
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+ Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n
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+ Tf=1n Itf=1 Xtf=0 Vtf=10)
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.ends LM386
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*******
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*SRC=BUZ-81;BUZ-81;MOSFETs N;Siemens;800V 4A 2.5 Ohm
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*SYM=N-MOSFET
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.SUBCKT BUZ-81 1 2 3
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LS 5 2 7N
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LD 95 3 5N
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RG 4 11 5.5M
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RS 5 76 23M
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D81 76 95 DREV
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.MODEL DREV D CJO=0.4N RS=20M TT=625N IS=300P BV=800
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M81 86 11 76 96 MBUZ
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.MODEL MBUZ NMOS VTO=3.463 KP=3.263
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M2 11 86 8 8 MSW
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.MODEL MSW NMOS VTO=0.001 KP=5
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M3 86 11 8 8 MSW
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COX 11 8 1.3N
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DGD 8 86 DCGD
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.MODEL DCGD D CJO=0.265N M=0.495 VJ=0.975
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CGS 76 11 1N
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MRDR 86 86 95 86 MVRD
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.MODEL MVRD NMOS VTO=-24.99 KP=.022
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LG 4 1 7N
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.ENDS
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.END |